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APT6010LLLE3 PDF预览

APT6010LLLE3

更新时间： 2024-09-16 14:47:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网高压开关脉冲晶体管
页数 文件大小 规格书
5页 259K
描述
Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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APT6010LLLE3 技术参数

生命周期：Active包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：compliant风险等级：5.63
其他特性：FAST SWITCHING, HIGH VOLTAGE雪崩能效等级（Eas）：3000 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (ID)：54 A最大漏源导通电阻：0.1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-264AA
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：216 A表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

APT6010LLLE3 数据手册

 浏览型号APT6010LLLE3的Datasheet PDF文件第2页浏览型号APT6010LLLE3的Datasheet PDF文件第3页浏览型号APT6010LLLE3的Datasheet PDF文件第4页浏览型号APT6010LLLE3的Datasheet PDF文件第5页 
600V 54A 0.100Ω  
APT6010B2LL APT6010LLL  
APT6010B2LL* APT6010LLLG*  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
R
B2LL  
POWER MOS 7 MOSFET  
Power MOS 7® is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)  
and Qg. Power MOS 7® combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with Microsemi's  
patented metal gate structure.  
T-MAX™  
TO-264  
LLL  
D
S
• Lower Input Capacitance  
• Lower Miller Capacitance  
• Lower Gate Charge, Qg  
• Increased Power Dissipation  
• Easier To Drive  
G
• Popular T-MAX™ or TO-264 Package  
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT6010B2_LLL  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
600  
54  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
216  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±30  
±40  
Watts  
W/°C  
690  
PD  
5.52  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
54  
1
EAR  
EAS  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
50  
4
3000  
STATICELECTRICALCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Volts  
Ohms  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
600  
2
Drain-Source On-State Resistance  
(VGS = 10V, ID = 27A)  
0.100  
100  
500  
±100  
5
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)  
IDSS  
µA  
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  
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