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APT5F100K PDF预览

APT5F100K

更新时间: 2024-11-16 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 192K
描述
N-Channel FREDFET

APT5F100K 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.83
其他特性:FAST SWITCHING, AVALANCHE RATED雪崩能效等级(Eas):310 mJ
外壳连接:DRAIN配置:Single
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):32 A最大漏源导通电阻:2.9 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):225 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

APT5F100K 数据手册

 浏览型号APT5F100K的Datasheet PDF文件第2页浏览型号APT5F100K的Datasheet PDF文件第3页浏览型号APT5F100K的Datasheet PDF文件第4页 
APT5F100K  
1000V, 5A 2.8Ω Max, Trr 155nS  
N-Channel FREDFET  
POWER MOS 8® is a high speed, high voltage N-channel switch-mode power  
TO-220  
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-  
mized for high reliability in ZVS phase shifted bridge and other circuits through reduced  
t , soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a  
rr  
greatly reduced ratio of C /C result in excellent noise immunity and low switching  
rss iss  
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure  
help control di/dt during switching, resulting in low EMI and reliable paralleling, even  
when switching at very high frequency.  
APT5F100K  
Single die FREDFET  
D
S
G
FEATURES  
TYPICAL APPLICATIONS  
• ZVS phase shifted and other full bridge  
• Fast switching with low EMI  
• Half bridge  
• Low t for high reliability  
rr  
• PFC and other boost converter  
• Buck converter  
• Ultra low C  
rss  
for improved noise immunity  
• Low gate charge  
• Single and two switch forward  
• Flyback  
• Avalanche energy rated  
• RoHS compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
Continuous Drain Current @ TC = 25°C  
5
3
ID  
Continuous Drain Current @ TC = 100°C  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
20  
±30  
310  
3
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
225  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
0..35  
Junction to Case Thermal Resistance  
°C/W  
°C  
RθCS  
0.15  
Case to Sink Thermal Resistance, Flat, Greased Surface  
TJ,TSTG  
-55  
150  
300  
Operating and Storage Junction Temperature Range  
TL  
Soldering Temperature for 10 Seconds (1.6mm from case)  
oz  
g
0.22  
6.2  
WT  
Package Weight  
in·lbf  
N·m  
10  
Torque  
Mounting Torque ( TO-247 Package), 4-40 or M3 screw  
1.1  
Microsemi Website - http://www.microsemi.com  

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