5秒后页面跳转
APT19F100J_07 PDF预览

APT19F100J_07

更新时间: 2024-11-27 04:32:47
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 274K
描述
N-Channel FREDFET

APT19F100J_07 数据手册

 浏览型号APT19F100J_07的Datasheet PDF文件第2页浏览型号APT19F100J_07的Datasheet PDF文件第3页浏览型号APT19F100J_07的Datasheet PDF文件第4页 
APT19F100J  
1000V, 19A, 0.46Ω Max, t ≤290ns  
rr  
N-Channel FREDFET  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
S
S
7
2
2
D
-
G
This 'FREDFET' version has a drain-source (body) diode that has been optimized for  
T
O
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft  
rr  
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly  
S
"UL Recognized"  
file # E145592  
reduced ratio of C /C result in excellent noise immunity and low switching loss. The  
rss iss  
ISOTOP®  
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control  
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching  
at very high frequency.  
D
S
APT19F100J  
Single die FREDFET  
G
FEATURES  
TYPICAL APPLICATIONS  
• ZVS phase shifted and other full bridge  
• Fast switching with low EMI  
• Half bridge  
• Low t for high reliability  
rr  
• PFC and other boost converter  
• Buck converter  
• Ultra low C  
rss  
for improved noise immunity  
• Low gate charge  
• Single and two switch forward  
• Flyback  
• Avalanche energy rated  
• RoHS compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
19  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 100°C  
12  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
120  
±30  
1875  
16  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
460  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
Junction to Case Thermal Resistance  
0.27  
°C/W  
RθCS  
Case to Sink Thermal Resistance, Flat, Greased Surface  
Operating and Storage Junction Temperature Range  
0.15  
TJ,TSTG  
VIsolation  
°C  
V
-55  
150  
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)  
2500  
oz  
g
1.03  
29.2  
WT  
Package Weight  
in·lbf  
N·m  
10  
Torque  
Terminals and Mounting Screws.  
1.1  
Microsemi Website - http://www.microsemi.com  

与APT19F100J_07相关器件

型号 品牌 获取价格 描述 数据表
APT19F100J_09 MICROSEMI

获取价格

N-Channel FREDFET
APT19M120J MICROSEMI

获取价格

N-Channel MOSFET
APT19M120J_09 MICROSEMI

获取价格

N-Channel MOSFET
APT200GN60B2G MICROSEMI

获取价格

Field Stop IGBT
APT200GN60J ADPOW

获取价格

Intergrated Gate Resistor: Low EMI, High Reliability
APT200GN60J MICROSEMI

获取价格

Power Semiconductors Power Modules RF Power MOSFETs
APT200GN60JDQ4 MICROSEMI

获取价格

Power Semiconductors Power Modules
APT200GN60JDQ4 ADPOW

获取价格

IGBT
APT200GT60JR MICROSEMI

获取价格

Thunderbolt IGBT
APT200GT60JRDL MICROSEMI

获取价格

Resonant Mode Combi IGBT