APT19F100J
1000V, 19A, 0.46Ω Max, t ≤290ns
rr
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
S
S
7
2
2
D
-
G
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
T
O
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft
rr
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
S
"UL Recognized"
file # E145592
reduced ratio of C /C result in excellent noise immunity and low switching loss. The
rss iss
ISOTOP®
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
S
APT19F100J
Single die FREDFET
G
FEATURES
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Fast switching with low EMI
• Half bridge
• Low t for high reliability
rr
• PFC and other boost converter
• Buck converter
• Ultra low C
rss
for improved noise immunity
• Low gate charge
• Single and two switch forward
• Flyback
• Avalanche energy rated
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
19
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C
12
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
120
±30
1875
16
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
460
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
Junction to Case Thermal Resistance
0.27
°C/W
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
0.15
TJ,TSTG
VIsolation
°C
V
-55
150
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
2500
oz
g
1.03
29.2
WT
Package Weight
in·lbf
N·m
10
Torque
Terminals and Mounting Screws.
1.1
Microsemi Website - http://www.microsemi.com