Datasheet > APT200GT60JR

APT200GT60JR

更新时间： 2024-11-24 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
6页	204K
描述
Thunderbolt IGBT

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数据手册

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APT200GT60JR 数据手册

APT200GT60JR

600V, 200A, V

= 2.1V Typical

CE(ON)

Thunderbolt IGBT^®

The Thunderbolt IGBT^®is a new generation of high voltage power IGBTs. Using

Non-Punch-Through Technology, the Thunderbolt IGBT^®offers superior rugged-

ness and ultrafast switching speed.

Features

• RBSOA and SCSOA Rated

• Low Forward Voltage Drop

• Low Tail Current

"UL Recognized"

file # E145592

• High Frequency Switching to 50KHz

• Ultra Low Leakage Current

ISOTOP^®

• Integrated Gate Resistor

Low EMI, High Reliability

• RoHS Compliant

Maximum Ratings

All Ratings: T_C= 25°C unless otherwise speciﬁed.

Parameter

Symbol

Ratings

Unit

Collector-Emitter Voltage

Gate-Emitter Voltage

600

V_CES

Volts

±30

195

V_GE

I_C1

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 100°C

Pulsed Collector Current ¹

100

Amps

I_C2

600

I_CM

SSOA

P_D

600A @ 600V

500

Switching Safe Operating Area @ T_J= 150°C

Total Power Dissipation

Watts

°C

Operating and Storage Junction Temperature Range

-55 to 150

T_J, T_STG

Static Electrical Characteristics

Characteristic / Test Conditions

Unit

Symbol

Min

Typ

Max

V_(BR)CES

600

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 5mA)

Gate Threshold Voltage (V_CE= V_GE, I_C= 4.0mA, T_j= 25°C)

Collector Emitter On Voltage (V_GE= 15V, I_C= 200A, T_j= 25°C)

Collector Emitter On Voltage (V_GE= 15V, I_C= 200A, T_j= 125°C)

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 25°C) ²

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 125°C) ²

Gate-Emitter Leakage Current (V_GE= ±30V)

V_GE(TH)

Volts

1.6

2.0

2.5

V_CE(ON)

μA

I_CES

I_GES

1000

300

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4 5 6

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