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APT200GN60JDQ4 PDF预览

APT200GN60JDQ4

更新时间: 2024-11-24 08:33:19
品牌 Logo 应用领域
ADPOW 双极性晶体管
页数 文件大小 规格书
9页 527K
描述
IGBT

APT200GN60JDQ4 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X4Reach Compliance Code:unknown
风险等级:5.63外壳连接:ISOLATED
最大集电极电流 (IC):283 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):660 ns标称接通时间 (ton):130 ns
Base Number Matches:1

APT200GN60JDQ4 数据手册

 浏览型号APT200GN60JDQ4的Datasheet PDF文件第2页浏览型号APT200GN60JDQ4的Datasheet PDF文件第3页浏览型号APT200GN60JDQ4的Datasheet PDF文件第4页浏览型号APT200GN60JDQ4的Datasheet PDF文件第5页浏览型号APT200GN60JDQ4的Datasheet PDF文件第6页浏览型号APT200GN60JDQ4的Datasheet PDF文件第7页 
600V
APT200GN60JDQ4  
®
E
E
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra  
low VCE(ON) and are ideal for low frequency applications that require absolute minimum  
conduction loss. Easy paralleling is a result of very tight parameter distribution and  
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures  
extremely reliable operation, even in the event of a short circuit fault. Low gate charge  
7
2
2
-
C
G
T
O
S
simplifies gate drive design and minimizes losses  
"UL Recognized"  
file # E145592  
ISOTOP®  
600V Field Stop  
• Trench Gate: Low VCE(on)  
• Easy Paralleling  
• 5µs Short Circuit Capability  
• Intergrated Gate Resistor: Low EMI, High Reliability  
• 175°C Rated  
C
E
G
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
Symbol  
UNIT  
APT200GN60JDQ4  
VCES  
Collector-Emitter Voltage  
600  
Volts  
VGE  
IC1  
Gate-Emitter Voltage  
±20  
283  
158  
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 110°C  
IC2  
Amps  
1
Pulsed Collector Current  
ICM  
600  
Switching Safe Operating Area @ TJ = 175°C  
Total Power Dissipation  
600A @600V  
682  
SSOA  
PD  
Watts  
°C  
TJ,TSTG  
-55 to 175  
Operating and Storage Junction Temperature Range  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
UNIT  
MIN  
TYP  
MAX  
V(BR)CES  
VGE(TH)  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)  
Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)  
600  
5
5.8  
6.5  
1.05  
1.45  
1.65  
1.15  
1.19  
1.85  
Volts  
VCE(ON)  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)  
50  
ICES  
µA  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)  
TBD  
600  
IGES  
nA  
Gate-Emitter Leakage Current (VGE = ±20V)  
Intergrated Gate Resistor  
RGINT  
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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