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AP9980GH PDF预览

AP9980GH

更新时间: 2024-11-01 12:26:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 180K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9980GH 数据手册

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AP9980GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
80V  
D
S
Single Drive Requirement  
Fast Switching Performance  
45mΩ  
21.3A  
G
Description  
G
D
S
TO-252(H)  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
The TO-252 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9980GJ) are  
available for low-profile applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
80  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
21.3  
A
13.4  
A
80  
A
PD@TC=25℃  
Total Power Dissipation  
41.7  
W
Linear Derating Factor  
0.33  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
3.0  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
110  
Data and specifications subject to change without notice  
1
200810172  

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