AP9980M

更新时间： 2024-11-01 08:32:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	76K
描述
N-CHANNEL ENHANCEMENT MODE

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中文翻译

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数据手册

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AP9980M 数据手册

AP9980M

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

80V

52mΩ

4.6A

▼ Single Drive Requirement

▼ Surface Mount Package

SO-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, lower on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

4.6

2.9

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=100℃

I_DM

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

W/℃

℃

T_STG

T_J

Storage Temperature Range

-55 to 150

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200107041

12 3 4

中文翻译

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