AP9980GJ-HF

更新时间： 2024-11-01 13:05:35

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富鼎先进 - A-POWER		/
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AP9980GJ-HF 数据手册

AP9980GH/J

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

80V

▼ Single Drive Requirement

▼ Fast Switching Performance

45mΩ

21.3A

Description

TO-252(H)

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP9980GJ) are

available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+25

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

21.3

13.4

P_D@T_C=25℃

Total Power Dissipation

41.7

Linear Derating Factor

0.33

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

3.0

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

110

Data and specifications subject to change without notice

200810172

12 3 4 5 6

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