5秒后页面跳转
AP9575GH PDF预览

AP9575GH

更新时间: 2024-10-28 06:37:19
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 99K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9575GH 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.11Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):15 A最大漏源导通电阻:0.09 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):45 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP9575GH 数据手册

 浏览型号AP9575GH的Datasheet PDF文件第2页浏览型号AP9575GH的Datasheet PDF文件第3页浏览型号AP9575GH的Datasheet PDF文件第4页 
AP9575GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-60V  
90mΩ  
-15A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
Description  
G
D
S
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9575GJ) is  
available for low-profile applications.  
TO-252(H)  
TO-251(J)  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
-15  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
-9.5  
-45  
A
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
31.3  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
4.0  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
62.5  
110  
Rthj-a  
Data and specifications subject to change without notice  
1
200902093  

与AP9575GH相关器件

型号 品牌 获取价格 描述 数据表
AP9575GH-HF A-POWER

获取价格

Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
AP9575GH-HF_14 A-POWER

获取价格

Simple Drive Requirement
AP9575GI A-POWER

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9575GI_09 A-POWER

获取价格

Lower Gate Charge, Simple Drive Requirement
AP9575GI-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9575GJ A-POWER

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9575GJ-HF A-POWER

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9575GJ-HF_14 A-POWER

获取价格

Simple Drive Requirement
AP9575GM A-POWER

获取价格

Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
AP9575GM-HF A-POWER

获取价格

TRANSISTOR POWER, FET, FET General Purpose Power