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AP90T03GH PDF预览

AP90T03GH

更新时间: 2024-11-01 12:26:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲驱动
页数 文件大小 规格书
6页 212K
描述
Lower On- resistance, Simple Drive Requirement

AP90T03GH 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-252包装说明:ROHS COMPLIANT PACKAGE-3
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.004 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):350 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP90T03GH 数据手册

 浏览型号AP90T03GH的Datasheet PDF文件第2页浏览型号AP90T03GH的Datasheet PDF文件第3页浏览型号AP90T03GH的Datasheet PDF文件第4页浏览型号AP90T03GH的Datasheet PDF文件第5页浏览型号AP90T03GH的Datasheet PDF文件第6页 
AP90T03GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Lower On- resistance  
BVDSS  
RDS(ON)  
ID  
30V  
4mΩ  
75A  
D
S
Simple Drive Requirement  
Fast Switching Characteristic  
G
Description  
G
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP90T03GJ)  
is available for low-profile applications.  
D
S
TO-252(H)  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
75  
A
63  
A
350  
A
PD@TC=25℃  
Total Power Dissipation  
96  
W
Linear Derating Factor  
0.7  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
1.3  
Unit  
/W  
/W  
Rthj-c  
Rthj-a  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
110  
Data & specifications subject to change without notice  
1
200802182  

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