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AP90T10GP-HF PDF预览

AP90T10GP-HF

更新时间: 2024-09-13 12:26:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 56K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP90T10GP-HF 数据手册

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AP90T10GP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
7mΩ  
125A  
Lower On-resistance  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP90T10 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
The TO-220 package is widely preferred for all commercial-  
industrial through hole applications. The low thermal resistance and  
low package cost contribute to the worldwide popular package.  
G
TO-220(P)  
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
100  
+20  
125  
120  
80  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
ID@TC=25  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current (Chip)  
Continuous Drain Current, VGS @ 10V3  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
A
A
A
320  
250  
2
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
W
W
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
0.5  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
201303273  

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