AP4P040H
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower Gate Charge
BVDSS
RDS(ON)
ID
-40V
▼ Simple Drive Requirement
40mΩ
-19.6A
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
AP4P040 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an
extreme efficient device for use in a wide range of power applications.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
-40
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
-19.6
-12.4
-80
A
Drain Current, VGS @ 10V
Pulsed Drain Current1
A
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
25
W
W
mJ
℃
℃
2
16.2
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
5
Rthj-a
62.5
1
202004241