AP20P02J

更新时间： 2024-11-06 04:06:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	84K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AP20P02J 数据手册

AP20P02H/J

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-20V

52mΩ

-18A

▼ 2.5V Gate Drive Capability

▼ Fast Switching

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-252(H)

The TO-252 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP20P02J) are available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

- 20

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 12

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-18

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

-14

-50

P_D@T_C=25℃

Total Power Dissipation

31.25

0.25

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

4.0

Unit

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

Data and specifications subject to change without notice

201225023

12 3 4 5 6

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AP20T03GJ	A-POWER	获取价格	TRANSISTOR 12.5 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PA
AP20T03GJ-HF	A-POWER	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
AP20T03GT-HF	A-POWER	获取价格	Lower Gate Charge, Simple Drive Requirement
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