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AP20P02S PDF预览

AP20P02S

更新时间: 2024-11-06 08:31:47
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 86K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP20P02S 数据手册

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AP20P02S/P  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
D
S
BVDSS  
RDS(ON)  
ID  
-20V  
52mΩ  
-18A  
2.5V Gate Drive Capability  
Fast Switching  
G
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-263  
The TO-263 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP20P02P) are available for low-profile applications.  
G
TO-220  
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
- 20  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
± 12  
-18  
V
Continuous Drain Current, VGS @ 10V  
ID@TA=25  
ID@TA=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
-14  
A
-50  
A
PD@TA=25℃  
Total Power Dissipation  
31.25  
0.25  
W
Linear Derating Factor  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
4.0  
Unit  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
62  
Data and specifications subject to change without notice  
200214031  

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