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AP20T03GH PDF预览

AP20T03GH

更新时间: 2024-11-06 04:06:23
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 73K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP20T03GH 数据手册

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AP20T03GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
30V  
D
S
Simple Drive Requirement  
50mΩ  
12.5A  
Fast Switching Characteristic  
G
Description  
G
D
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP20T03GJ) is available for low-profile applications.  
S
TO-252(H)  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
± 20  
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current1  
12.5  
A
8
A
40  
A
PD@TC=25℃  
Total Power Dissipation  
12.5  
W
Linear Derating Factor  
0.1  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
10  
Unit  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data & specifications subject to change without notice  
200107041  

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