AP20P02P

更新时间： 2024-11-23 08:31:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	86K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AP20P02P 数据手册

AP20P02S/P

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-20V

52mΩ

-18A

▼ 2.5V Gate Drive Capability

▼ Fast Switching

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-263

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP20P02P) are available for low-profile applications.

TO-220

Absolute Maximum Ratings

Symbol

Parameter

Rating

- 20

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 12

-18

Continuous Drain Current, V_GS@ 10V

I_D@T_A=25℃

I_D@T_A=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

-14

-50

P_D@T_A=25℃

Total Power Dissipation

31.25

0.25

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

4.0

Unit

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

Data and specifications subject to change without notice

200214031

12 3 4 5 6

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