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AP20P02GH PDF预览

AP20P02GH

更新时间: 2024-11-23 08:31:47
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 85K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP20P02GH 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.052 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP20P02GH 数据手册

 浏览型号AP20P02GH的Datasheet PDF文件第2页浏览型号AP20P02GH的Datasheet PDF文件第3页浏览型号AP20P02GH的Datasheet PDF文件第4页浏览型号AP20P02GH的Datasheet PDF文件第5页浏览型号AP20P02GH的Datasheet PDF文件第6页 
AP20P02GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
D
S
BVDSS  
RDS(ON)  
ID  
-20V  
52mΩ  
-18A  
2.5V Gate Drive Capability  
Fast Switching  
G
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-252(H)  
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP20P02GJ) are available for low-profile applications.  
G
D
TO-251(J)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
- 20  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
± 12  
Continuous Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
-18  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
-14  
A
-50  
A
PD@TC=25℃  
Total Power Dissipation  
31.25  
0.25  
W
Linear Derating Factor  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
4.0  
Unit  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
201225023  

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TRANSISTOR 12.5 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PA