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AP1L2Q PDF预览

AP1L2Q

更新时间: 2024-11-08 22:27:35
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管开关
页数 文件大小 规格书
6页 86K
描述
on-chip resistor NPN silicon epitaxial transistor

AP1L2Q 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.88Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:25 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP1L2Q 数据手册

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DATA SHEET  
COMPOUND TRANSISTOR  
AP1 SERIES  
on-chip resistor NPN silicon epitaxial transistor  
For mid-speed switching  
PACKAGE DRAWING (UNIT: mm)  
FEATURES  
Current drive available up to 0.7 A  
On-chip bias resistor  
Low power consumption during drive  
AP1 SERIES LISTS  
R1 (K)  
R2 (K)  
10  
Products  
AP1A4A  
AP1L2Q  
AP1A3M  
AP1F3P  
AP1J3P  
AP1L3N  
AP1A4M  
0.47  
1.0  
4.7  
1.0  
10  
Electrode Connection  
1. Emitter  
2. Collector JEDEC: TO-92  
3. Base IEC : PA33  
EIAJ : SC-43B  
2.2  
3.3  
10  
4.7  
10  
10  
10  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
IB(DC)  
PT  
Ratings  
25  
Unit  
V
25  
V
10  
V
0.7  
A
1.0  
A
0.02  
750  
A
Total power dissipation  
Junction temperature  
mW  
°C  
°C  
Tj  
150  
55 to +150  
Storage temperature  
Tstg  
* PW 10 ms, duty cycle 50 %  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16171EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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