Datasheet > AP1RC03GMT-HF

AP1RC03GMT-HF

更新时间： 2024-11-09 12:52:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
4页	55K
描述
Simple Drive Requirement, SO-8 Compatible with Heatsink

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AP1RC03GMT-HF 数据手册

AP1RC03GMT-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

0.99mΩ

260A

▼ SO-8 Compatible with Heatsink

▼ Low On-resistance

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with the

best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The PMPAK^®5x6 package is special for DC-DC converters application

and the foot print is compatible with SO-8 with backside heat sink and

lower profile.

PMPAK^®5x6

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

260

57.6

Continuous Drain Current (Chip), V_GS@ 10V⁴

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

300

104

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

1.2

Rthj-a

Data and specifications subject to change without notice

201304102

12 3 4

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