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AP1R803GMT-HF PDF预览

AP1R803GMT-HF

更新时间: 2024-11-09 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 99K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP1R803GMT-HF 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-F5
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.75雪崩能效等级(Eas):28.8 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):170 A
最大漏源导通电阻:0.0019 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F5元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP1R803GMT-HF 数据手册

 浏览型号AP1R803GMT-HF的Datasheet PDF文件第2页浏览型号AP1R803GMT-HF的Datasheet PDF文件第3页浏览型号AP1R803GMT-HF的Datasheet PDF文件第4页 
AP1R803GMT-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
1.9mΩ  
170A  
D
S
SO-8 Compatible with Heatsink  
Low On-resistance  
RoHS Compliant  
G
D
D
Description  
D
D
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
The PMPAK 5x6 package is special for DC-DC converters application  
and the foot print is compatible with SO-8 with backside heat sink and  
lower profile.  
S
S
S
G
PMPAK 5x6  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current (Chip)  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
170  
A
43  
A
34  
A
300  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
83.3  
5
W
W
mJ  
Total Power Dissipation  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
28.8  
-55 to 150  
-55 to 150  
TSTG  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
1.5  
25  
Rthj-a  
Data & specifications subject to change without notice  
1
200903043  

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