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AP1000A

更新时间: 2024-11-17 22:39:11
品牌 Logo 应用领域
ASI 二极管
页数 文件大小 规格书
1页 16K
描述
SILICON PIN DIODE

AP1000A 数据手册

  
AP1000A  
SILICON PIN DIODE  
PACKAGE STYLE 15  
DESCRIPTION:  
The AP1000A is a Diffused Epitaxial  
Silicon PIN Diode.  
MAXIMUM RATINGS  
100mA  
IC  
VCE  
PDISS  
TJ  
100 V  
500 mW @ TC = 25 OC  
-65 OC to +150 OC  
-65 OC to +175 OC  
50 OC/W  
TSTG  
θJC  
5.0 Sec./200 OC  
TSOLD  
NONE  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
VB  
TEST CONDITIONS  
MINIMUM  
TYPICAL MAXIMUM  
UNITS  
V
IR = 10 µA  
VR = 6.0 V  
IF = 20 mA  
IF = 100 mA  
100  
CJ  
f = 1.0 MHz  
f = 1.0 GHz  
0.05  
2.6  
pF  
RS  
Ohms  
2.0  
TL  
TS  
CP  
LS  
IF = 10 mA  
IR = 6.0 mA  
100  
nS  
nS  
pF  
nH  
10%-90% / 90%-10%  
10  
f = 1.0 MHz  
0.15  
2.5  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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