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AP1000A-001

更新时间: 2024-11-18 21:18:55
品牌 Logo 应用领域
ASI 开关测试二极管
页数 文件大小 规格书
1页 18K
描述
Pin Diode, 100V V(BR), Silicon, CASE 001, 2 PIN

AP1000A-001 技术参数

生命周期:Active包装说明:S-XUUC-X2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.6应用:SWITCHING
最小击穿电压:100 V配置:SINGLE
最大二极管电容:0.05 pF二极管元件材料:SILICON
最大二极管正向电阻:2 Ω二极管电阻测试电流:20 mA
二极管电阻测试频率:1000 MHz二极管类型:PIN DIODE
JESD-30 代码:S-XUUC-X2JESD-609代码:e4
少数载流子标称寿命:0.1 µs元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
最大功率耗散:0.5 W认证状态:Not Qualified
子类别:PIN Diodes表面贴装:YES
技术:POSITIVE-INTRINSIC-NEGATIVE端子面层:GOLD
端子形式:UNSPECIFIED端子位置:UPPER
Base Number Matches:1

AP1000A-001 数据手册

  
AP1000A-001  
SILICON PIN SWITCHING DIODE  
DESCRIPTION:  
The AP1000A-001 is a passivated  
epitaxial Silicon PIN Switching Diode,  
designed to cover a wide range of  
control applications that are in the  
category of RF switching.  
PACKAGE STYLE 001  
MAXIMUM RATINGS  
100mA  
100 V  
IC  
VCE  
PDISS  
TJ  
500 mW @ TC = 25 °C  
-65 °C to +175 °C  
-65 °C to +175 °C  
50 °C/W  
A = 0.020" MAX SQUARE  
B = 0.010"MAX  
TSTG  
OR  
C = 0.00025 X 0.003" GOLD RIBBON (ANODE)  
BACK SIDE GOLD (CATHODE)  
5.0 Sec./200 °C  
TSOLD  
NONE  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
VB  
TEST CONDITIONS  
MINIMUM  
TYPICAL MAXIMUM  
UNITS  
V
100  
IR = 10 μA  
VR = 6.0 V  
IF = 20 mA  
IF = 100 mA  
CJ  
f = 1.0 MHz  
f = 1.0 GHz  
0.05  
2.6  
pF  
RS  
Ohms  
2.0  
TL  
TS  
IF = 10 mA  
IF = 10 mA  
IR = 6.0 mA  
VR = 10 V  
100  
nS  
nS  
10  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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