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AP1001BSQ PDF预览

AP1001BSQ

更新时间: 2024-11-18 12:26:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 109K
描述
Lead-Free Package, Low Conductance Loss

AP1001BSQ 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:HALOGEN AND LEAD FREE, GREENFET PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7Is Samacsys:N
雪崩能效等级(Eas):28.8 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (Abs) (ID):15 A最大漏极电流 (ID):15 A
最大漏源导通电阻:0.006 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XBCC-N2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):34 W
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP1001BSQ 数据手册

 浏览型号AP1001BSQ的Datasheet PDF文件第2页浏览型号AP1001BSQ的Datasheet PDF文件第3页浏览型号AP1001BSQ的Datasheet PDF文件第4页 
AP1001BSQ  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Lead-Free Package  
BVDSS  
RDS(ON)  
ID  
30V  
6mΩ  
15A  
D
S
Low Conductance Loss  
Low Profile ( < 0.7mm )  
G
Description  
The AP1001BSQ used the latest APEC Power MOSFET silicon  
technology with the advanced technology packaging to provide the  
lowest on-resistance loss, low profile and dual sided cooling  
compatible.  
GreenFETTM  
The GreenFETTM package is compatible with existing soldering  
techniques and is ideal for power application, especially for high  
frequency / high efficiency DC-DC converters.  
D
G
S
D
SQ  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V3  
Continuous Drain Current, VGS @ 10V3  
Continuous Drain Current, VGS @ 10V4  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=100℃  
ID@TC=25℃  
IDM  
15  
A
12  
A
59  
A
120  
A
PD@TA=25℃  
PD@TA=70℃  
PD@TC=25℃  
EAS  
Total Power Dissipation3  
Total Power Dissipation3  
Total Power Dissipation4  
Single Pulse Avalanche Energy5  
2.2  
W
W
W
mJ  
A
1.4  
34  
28.8  
24  
IAR  
Avalanche Current  
TSTG  
Storage Temperature Range  
Operating Junction Temperature Range  
-40 to 150  
-40 to 150  
TJ  
Thermal Data  
Rthj-c  
Maximum Thermal Resistance, Junction-case4  
Maximum Thermal Resistance, Junction-ambient3  
3.7  
58  
/W  
/W  
Rthj-a  
Data and specifications subject to change without notice  
1
201106013  

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