是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | HALOGEN AND LEAD FREE, GREENFET PACKAGE-2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.7 | Is Samacsys: | N |
雪崩能效等级(Eas): | 28.8 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (Abs) (ID): | 15 A | 最大漏极电流 (ID): | 15 A |
最大漏源导通电阻: | 0.006 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XBCC-N2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 34 W |
最大脉冲漏极电流 (IDM): | 120 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP1002 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 450V V(BR)CEO | 15A I(C) | TO-210AC | |
AP1003 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 450V V(BR)CEO | 15A I(C) | TO-210AC | |
AP1004 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 15A I(C) | TO-3 | |
AP1005 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 15A I(C) | TO-3 | |
AP1006 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 15A I(C) | TO-210AC | |
AP1007 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 15A I(C) | TO-210AC | |
AP1008 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 5A I(C) | TO-3 | |
AP1009 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 5A I(C) | TO-3 | |
AP100B10 | LEM |
获取价格 |
AC Current transducer | |
AP100-B10 | LEM |
获取价格 |
AC Current transducer AP-B10 |