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AP02N60I PDF预览

AP02N60I

更新时间: 2024-01-09 16:17:48
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 84K
描述
N-CHANNEL ENHANCEMENT MODE

AP02N60I 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.64雪崩能效等级(Eas):130 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):2 A最大漏源导通电阻:8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):6 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP02N60I 数据手册

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AP02N60I  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Repetitive Avalanche Rated  
Fast Switching  
BVDSS  
RDS(ON)  
ID  
600V  
8Ω  
2A  
D
S
Simple Drive Requirement  
G
Description  
The TO-220CFM package is universally preferred for all commercial-  
industrial applications. The device is suited for switch mode power  
supplies ,AC-DC converters and high current high speed switching  
circuits.  
G
D
S
TO-220CFM(I)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
600  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
± 30  
2
V
A
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
1.26  
3.6  
22  
A
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
Single Pulse Avalanche Energy2  
0.176  
80  
W/℃  
mJ  
A
EAS  
IAR  
Avalanche Current  
2
EAR  
TSTG  
TJ  
Repetitive Avalanche Energy  
Storage Temperature Range  
Operating Junction Temperature Range  
2
mJ  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Value  
Unit  
/W  
/W  
Rthj-c  
Max.  
Max.  
5.7  
62  
Rthj-a  
Data & specifications subject to change without notice  
200117032  

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