Datasheet > AP02N60I_08

AP02N60I_08

更新时间： 2022-05-18 18:13:32

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
7页	114K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP02N60I_08 数据手册

AP02N60I

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% Avalanche Test

BV_DSS

R_DS(ON)

I_D

600V

8Ω

▼ Fast Switching

▼ Simple Drive Requirement

Description

The TO-220CFM package is widely preferred for all commercial-

industrial applications. The device is suited for switch mode power

supplies ,AC-DC converters and high current high speed switching

circuits.

TO-220CFM(I)

Absolute Maximum Ratings

Symbol

Parameter

Rating

600

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 30

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

1.26

3.6

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy²

0.176

W/℃

E_AS

I_AR

Avalanche Current

E_AR

T_STG

T_J

Repetitive Avalanche Energy

Storage Temperature Range

Operating Junction Temperature Range

℃

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

5.7

Rthj-a

Data & specifications subject to change without notice

200806054

12 3 4 5 6 7

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