AP02N60I-HF

更新时间： 2024-01-17 08:40:39

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富鼎先进 - A-POWER		/
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AP02N60I-HF 数据手册

AP02N60H/J

Pb Free Plating Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

600V

8Ω

▼ Repetitive Avalanche Rated

▼ Fast Switching

1.6A

▼ Simple Drive Requirement

▼ RoHS Compliant

Description

TO-252(H)

TO-251(J)

The TO-252 package is universally preferred for all commercial-

industrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP02N60J) is available for low-profile

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

600

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±30

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

1.6

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy²

0.31

W/℃

E_AS

I_AR

Avalanche Current

1.6

E_AR

T_STG

T_J

Repetitive Avalanche Energy

Storage Temperature Range

Operating Junction Temperature Range

0.5

℃

-55 to 150

Thermal Data

Symbol

Parameter

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Value

3.2

Units

℃/W

Rthj-c

Max.

Rthj-a

110

Data & specifications subject to change without notice

200705051-1/4

12 3 4

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