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AP0100AT2L00XUGA0-AM-DR

更新时间： 2024-09-17 11:01:43

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管
页数	文件大小	规格书
3页	29K
描述
图像信号处理器，1 MP

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AP0100AT2L00XUGA0-AM-DR 数据手册

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January 2005

BC517

NPN Darlington Transistor

•

This device is designed for applications requiring extremely high current gain at currents to 1.0A.

Sourced from process 05.

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings *

T = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

CEO

CBO

EBO

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

- Continuous

1.2

T , T

Operating and Storage Junction Temperature Range

-55 ~ 150

°C

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min.

Max

Units

Off Characteristics

Collector-Emitter Breakdown Voltage *

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

= 2.0mA, I = 0

(BR)CEO

(BR)CBO

(BR)EBO

CBO

= 10µA, I = 0

= 100nA, I = 0

= 30V, I = 0

100

On Characteristics *

DC Current Gain

= 2.0V, I = 20mA

30,000

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

= 100mA, I = 0.1mA

CE(sat)

BE(on)

= 10mA, V = 5.0V

1.4

Thermal Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Total Device Dissipation

Derate above 25°C

625

5.0

mW/°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

83.3

200

°C/W

θJC

θJA

BC517 Rev. A

www.fairchildsemi.com

12 3

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