Datasheet > AOWF11N70

AOWF11N70

更新时间： 2024-11-14 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	305K
描述
700V,11A N-Channel MOSFET

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AOWF11N70 数据手册

AOWF11N70

700V,11A N-Channel MOSFET

General Description

Product Summary

V_DS

800V@150℃

11A

The AOWF11N70 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability this parts can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.87Ω

100% UIS Tested

100% R_gTested

TO-262F

Top View

Bottom View

AOWF11N70

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOWF11N70

Units

Drain-Source Voltage

V_DS

700

Gate-Source Voltage

V_GS

±30

11*

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

7.2*

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AR

120

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

240

V/ns

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

0.22

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

R_θJA

AOWF11N70

Units

°C/W

Maximum Junction-to-Ambient ^A,D

Maximum Junction-to-Case

R_θJC

4.5

* Drain current limited by maximum junction temperature.

Rev0: Dec 2011

www.aosmd.com

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