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AOY516

更新时间: 2024-11-14 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 260K
描述
30V N-Channel AlphaMOS

AOY516 数据手册

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AOD516/AOI516/AOY516  
30V N-Channel AlphaMOS  
General Description  
Product Summary  
VDS  
30V  
• Latest Trench Power MOSFET technology  
• Very Low RDS(on) at 4.5VGS  
• Low Gate Charge  
• High Current Capability  
• RoHS and Halogen-Free Compliant  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
50A  
< 5m  
< 9mΩ  
Application  
• DC/DC Converters in Computing  
100% UIS Tested  
100% Rg Tested  
• Isolated DC/DC Converters in Telecom and Industrial  
TO-251A IPAK  
TO251B (IPAK short lead)  
TO252  
DPAK  
D
TopView  
Top View  
Bottom View  
D
Bottom View  
D
G
D
G
S
D
S
G
S
D
S
D
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
±20  
50  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current G  
ID  
TC=100°C  
39  
A
Pulsed Drain Current C  
IDM  
170  
18  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
IDSM  
A
14  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IAS  
29  
A
mJ  
V
EAS  
42  
VDS Spike  
100ns  
VSPIKE  
36  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
50  
PD  
W
Power Dissipation B  
25  
2.5  
PDSM  
W
°C  
Power Dissipation A  
1.6  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16  
Max  
20  
50  
3
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Steady-State  
Steady-State  
41  
RθJC  
2.5  
Rev 3: Nov 2012  
www.aosmd.com  
Page 1 of 6  

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