Datasheet > AOWF12N50

AOWF12N50

更新时间： 2024-11-14 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	287K
描述
500V, 12A N-Channel MOSFET

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AOWF12N50 数据手册

AOW12N50/AOWF12N50

500V, 12A N-Channel MOSFET

General Description

Product Summary

V_DS

The AOW12N50 & AOWF12N50 have been fabricated

using an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.By providing

low R_DS(on), C_issand C_rssalong with guaranteed avalanche

capability these parts can be adopted quickly into new

and existing offline power supply designs.

600V@150℃

12A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.52Ω

100% UIS Tested

100% R_gTested

TO-262

TO-262F

Bottom View

Top View

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOW12N50

AOWF12N50

Units

V_DS

Drain-Source Voltage

500

±30

V_GS

Gate-Source Voltage

12*

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy ^C

I_D

T_C=100°C

8.4

8.4*

I_DM

5.5

454

908

I_AR

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

250

P_D

Power Dissipation ^B

Derate above 25^oC

0.22

T_J, T_STG

T_L

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

-55 to 150

300

°C

Parameter

Maximum Junction-to-Ambient ^A,D

Symbol

R_θJA

AOW12N50

AOWF12N50

Units

°C/W

Maximum Case-to-sink ^A

Maximum Junction-to-Case

0.5

°C/W

R_θCS

R_θJC

4.5

* Drain current limited by maximum junction temperature.

Rev0: June 2010

www.aosmd.com

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