Datasheet > AOWF8N50

AOWF8N50

更新时间： 2024-11-14 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	385K
描述
500V, 8A N-Channel MOSFET

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AOWF8N50 数据手册

AOWF8N50

500V, 8A N-Channel MOSFET

General Description

Product Summary

V_DS

600V@150℃

The AOWF8N50 has been fabricated using an advanced

high voltage MOSFET process that is designed to deliver

high levels of performance and robustness in popular AC-

DC applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.85Ω

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability this part can be adopted

quickly into new and existing offline power supply

designs.

100% UIS Tested

100% R_gTested

TO-262F

Top View

Bottom View

AOWF8N50

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOWF8N50

Units

Drain-Source Voltage

Gate-Source Voltage

500

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

3.2

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

154

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

307

V/ns

W/ ^oC

27.8

0.22

-55 to 150

P_D

Power Dissipation ^B

Derate above 25^oC

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

°C

300

°C

Parameter

Maximum Junction-to-Ambient ^A,D

Maximum Junction-to-Case

Symbol

R_θJA

AOWF8N50

Units

°C/W

R_θJC

4.5

* Drain current limited by maximum junction temperature.

Rev0: Dec 2011

www.aosmd.com

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