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AOW418

更新时间: 2024-11-14 12:51:39
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
7页 260K
描述
100V N-Channel MOSFET

AOW418 数据手册

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AOW418  
100V N-Channel MOSFET  
SDMOSTM  
General Description  
Product Summary  
The AOW418 is fabricated with SDMOSTM trench  
technology that combines excellent RDS(ON) with low gate  
charge and low Qrr.The result is outstanding efficiency  
with controlled switching behavior. This universal  
technology is well suited for PWM, load switching and  
general purpose applications.  
VDS  
100V  
105A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 7V)  
< 10mΩ  
< 12mΩ  
100% UIS Tested  
100% Rg Tested  
TO-262  
D
Top View  
Bottom View  
G
G
S
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
100  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
±25  
VGS  
Continuous Drain  
Current G  
Pulsed Drain Current C  
TC=25°C  
105  
82  
ID  
TC=100°C  
A
IDM  
280  
TA=25°C  
TA=70°C  
9.5  
Continuous Drain  
Current  
IDSM  
A
7.5  
Avalanche Current C  
IAS, IAR  
60  
A
Avalanche energy L=0.1mH C  
EAS, EAR  
180  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
333  
PD  
W
167  
TA=25°C  
2.1  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.3  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
11  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
15  
60  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
47  
Steady-State  
Steady-State  
RθJC  
0.36  
0.45  
Rev0 : July 2010  
www.aosmd.com  
Page 1 of 7  

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