Datasheet > AOT5N100

AOT5N100

更新时间： 2024-09-30 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	400K
描述
1000V,4A N-Channel MOSFET

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AOT5N100 数据手册

AOT5N100/AOTF5N100

1000V,4A N-Channel MOSFET

General Description

The AOT5N100 & AOTF5N100 are fabricated using an

advanced high voltage MOSFET process that is designed

popular AC-DC applications.By providing low R_DS(on), C_iss

parts can be adopted quickly into new and existing offline

to deliver high levels of performance and robustness in

and C_rssalong with guaranteed avalanche capability this

power supply designs.

Features

V_DS

1100@150℃

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 4.2Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT5N100

AOTF5N100

Units

Drain-Source Voltage

V_DS

1000

±30

Gate-Source Voltage

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

2.5

2.5*

Pulsed Drain Current ^C

I_DM

2.8

117

235

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

195

1.6

P_D

Power Dissipation ^B

Derate above 25^oC

W/ ^oC

0.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

300

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

°C

Parameter

Symbol

R_θJA

AOT5N100

AOTF5N100

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

0.64

* Drain current limited by maximum junction temperature.

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