Datasheet > AOT5N60

AOT5N60

更新时间： 2024-09-30 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	351K
描述
600V,5A N-Channel MOSFET

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AOT5N60 数据手册

AOT5N60

600V,5A N-Channel MOSFET

General Description

The AOT5N60 have been fabricated using an advanced

high voltage MOSFET process that is designed to deliver

DC applications.By providing low R_DS(on), C_issand C_rss

can be adopted quickly into new and existing offlin

high levels of performance and robustness in popular AC-

along with guaranteed avalanche capability these parts

supply designs.

Features

e power

700V@150℃

V_DS

I_D(at V_GS=10V)

_DS(ON)(at V_GS=10V)

<1.8Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

600

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

3.4

Pulsed Drain Current ^C

I_DM

2.6

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

100

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

200

V/ns

W/ ^oC

132

P_D

Power Dissipation ^B

Derate above 25^oC

1.05

-55 to 150

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

°C

300

°C

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,D

Maximum Case-to-sink ^A

R_θCS

0.5

Maximum Junction-to-Case

R_θJC

0.76

0.95

1/5

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