Datasheet > AOT7N60_10

AOT7N60_10

更新时间： 2024-09-30 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	167K
描述
600V,7A N-Channel MOSFET

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AOT7N60_10 数据手册

AOT7N60/AOTF7N60

600V,7A N-Channel MOSFET

General Description

Product Summary

V_DS

700V@150℃

The AOT7N60 & AOTF7N60 have been fabricated using

an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

_DS(ON)(at V_GS=10V)

< 1.2Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT7N60L & AOTF7N60L

Top View

TO-220F

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOT7N60

AOTF7N60

Units

Drain-Source Voltage

Gate-Source Voltage

600

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

4.8

4.8*

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

135

270

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

192

38.5

0.3

P_D

Power Dissipation ^B

Derate above 25^oC

1.54

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

300

°C

Parameter

Symbol

R_θJA

AOT7N60

AOTF7N60

Units

°C/W

Maximum Junction-to-Ambient ^A,D

Maximum Case-to-sink ^A

R_θCS

0.5

Maximum Junction-to-Case

R_θJC

0.65

3.25

* Drain current limited by maximum junction temperature.

Rev5: March 2010

www.aosmd.com

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