5秒后页面跳转
AOT7N70 PDF预览

AOT7N70

更新时间: 2024-09-30 12:51:39
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
6页 222K
描述
700V, 7A N-Channel MOSFET

AOT7N70 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:2.33
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):7 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):198 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

AOT7N70 数据手册

 浏览型号AOT7N70的Datasheet PDF文件第2页浏览型号AOT7N70的Datasheet PDF文件第3页浏览型号AOT7N70的Datasheet PDF文件第4页浏览型号AOT7N70的Datasheet PDF文件第5页浏览型号AOT7N70的Datasheet PDF文件第6页 
AOT7N70/AOTF7N70  
700V, 7A N-Channel MOSFET  
General Description  
Product Summary  
VDS  
800V@150  
7A  
The AOT7N70 & AOTF7N70 have been fabricated using  
an advanced high voltage MOSFET process that is  
designed to deliver high levels of performance and  
robustness in popular AC-DC applications.  
By providing low RDS(on), Ciss and Crss along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
ID (at VGS=10V)  
R
DS(ON) (at VGS=10V)  
< 1.8  
100% UIS Tested  
100% Rg Tested  
For Halogen Free add "L" suffix to part number:  
AOT7N70L & AOTF7N70L  
Top View  
D
TO-220F  
TO-220  
G
S
S
S
D
G
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
AOT7N70  
AOTF7N70  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
700  
±30  
V
V
VGS  
TC=25°C  
7
7*  
Continuous Drain  
Current  
ID  
TC=100°C  
4.2  
4.2*  
A
Pulsed Drain Current C  
IDM  
24  
5
Avalanche Current C  
IAR  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
187  
375  
5
mJ  
Single plused avalanche energy G  
Peak diode recovery dv/dt  
TC=25°C  
mJ  
V/ns  
W
W/ oC  
198  
1.6  
38.5  
0.3  
PD  
Power Dissipation B  
Derate above 25oC  
Junction and Storage Temperature Range  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
Thermal Characteristics  
TJ, TSTG  
TL  
-55 to 150  
300  
°C  
°C  
Parameter  
Symbol  
RθJA  
AOT7N70  
65  
AOTF7N70  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,D  
65  
--  
Maximum Case-to-sink A  
RθCS  
0.5  
Maximum Junction-to-Case  
RθJC  
0.63  
3.25  
* Drain current limited by maximum junction temperature.  
Rev 1: July 2010  
www.aosmd.com  
Page 1 of 6  

与AOT7N70相关器件

型号 品牌 获取价格 描述 数据表
AOT7N70L AOS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AOT7S60 AOS

获取价格

600V 7A a MOS Power Transistor
AOT7S65 AOS

获取价格

650V 7A a MOS Power Transistor
AOT7S65 FREESCALE

获取价格

650V 7A a MOS TM Power Transistor
AOT8N50 AOS

获取价格

500V, 8A N-Channel MOSFET
AOT8N60 AOS

获取价格

600V, 8A N-Channel MOSFET
AOT8N60 FREESCALE

获取价格

600V,8A N-Channel MOSFET
AOT8N65 FREESCALE

获取价格

600V,8A N-Channel MOSFET
AOT8N65 AOS

获取价格

650V, 8A N-Channel MOSFET
AOT8N80 FREESCALE

获取价格

800V, 7.4A N-Channel MOSFET