Datasheet > AOT8N50

AOT8N50

更新时间： 2024-09-30 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	147K
描述
500V, 8A N-Channel MOSFET

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AOT8N50 数据手册

AOT8N50/AOTF8N50

500V, 8A N-Channel MOSFET

General Description

Features

The AOT8N50 & AOTF8N50 have been fabricated

using an advanced high voltage MOSFET process that

is designed to deliver high levels of performance and

robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power

supply designs.

V_DS(V) = 600V @ 150°C

I_D= 8A

(V_GS= 10V)

R_DS(ON)< 0.85Ω

100% UIS Tested!

100% R _gTested!

Top View

TO-220F

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT8N50

AOTF8N50

Units

V_DS

Drain-Source Voltage

500

V_GS

Gate-Source Voltage

±30

T_C=25°C

5.6*

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^{C, G}

I_D

T_C=100°C

5.6

I_DM

3.2

154

307

I_AR

Repetitive avalanche energy ^{C, G}

E_AR

E_AS

dv/dt

Single pulsed avalanche energy

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

176

1.4

38.5

0.3

P_D

Power Dissipation ^B

Derate above 25^oC

T_J, T_STG

Junction and Storage Temperature Range

-50 to 150

300

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

°C

Parameter

Maximum Junction-to-Ambient ^A,D

Symbol

R_θJA

AOT8N50

AOTF8N50

Units

°C/W

Maximum Case-to-Sink ^A

Maximum Junction-to-Case

°C/W

R_θCS

0.5

R_θJC

0.71

3.25

* Drain current limited by maximum junction temperature.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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