Datasheet > AOT8N60

AOT8N60

更新时间： 2024-09-30 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	524K
描述
600V,8A N-Channel MOSFET

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AOT8N60 数据手册

AOT8N60/AOTF8N60

600V,8A N-Channel MOSFET

General Description

The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

By providing low R_DS(on), C_issand C_rssalong with

robustness in popular AC-DC applications.

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply designs.

Features

V_DS

700V@150℃

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.9Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOT8N60

AOTF8N60

Units

Drain-Source Voltage

Gate-Source Voltage

600

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

6.2

6.2*

Pulsed Drain Current ^C

I_DM

3.2

150

300

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

208

P_D

Power Dissipation ^B

Derate above 25^oC

1.67

0.4

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

300

°C

Parameter

Symbol

R_θJA

AOT8N60

AOTF8N60

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

0.6

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

2.5

* Drain current limited by maximum junction temperature.

1/6

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