Datasheet > AOT5N60

AOT5N60

更新时间： 2024-09-30 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	165K
描述
600V, 5A N-Channel MOSFET

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AOT5N60 数据手册

AOT5N60

600V, 5A N-Channel MOSFET

formerly engineering part number AOT9604

General Description

Features

The AOT5N60 has been fabricated using an

advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power

supply designs.

V_DS(V) = 700V @ 150°C

I_D= 5A

_DS(ON)< 1.8 Ω (V_GS= 10V)

100% UIS Tested!

100% R _gTested!

_iss, C _oss, C _rssTested!

Top View

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

600

±30

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^B

Pulsed Drain Current ^C

Avalanche Current ^C

V_GS

T_C=25°C

T_C=100°C

I_D

3.2

I_DM

I_AR

2.6

Repetitive avalanche energy ^C

E_AR

E_AS

dV/dt

100

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

200

132

V/ns

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

1.05

T_J, T_STG

Junction and Storage Temperature Range

-50 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

R_θJA

Typical

Maximum

Units

Maximum Junction-to-Ambient ^A

Maximum Case-to-Sink ^A

°C/W

0.5

R_θCS

°C/W

Maximum Junction-to-Case ^D,F

R_θJC

0.76

0.95

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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