Datasheet > AOT460

AOT460

更新时间： 2024-09-30 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	357K
描述
N-Channel Enhancement Mode Field

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AOT460 数据手册

AOT460

N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AOT460/L uses advanced trench technology and

charge. This device is suitable for use in UPS, high

AOT460and AOT460L are electrically identical.

design to provide excellent R_DS(ON)with low gate

current switching applications.

Features

V_DS(V) = 60V

I_D= 85 A

(V_GS= 10V)

R_DS(ON)< 7.5mΩ (V_GS= 10V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current^G

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

T_C=25°C

I_DM

I_AR

E_AR

340

320

268

P_D

°C

Power Dissipation ^B

134

T_C=100°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJA

°C/W

R_θJC

0.45

0.56

1/6

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