Datasheet > AOT502

AOT502

更新时间： 2024-09-30 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	321K
描述
Clamped N-Channel MOSFET

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AOT502 数据手册

AOT502

Clamped N-Channel MOSFET

General Description

Product Summary

V_DS

Clamped

60A

AOT502 uses an optimally designed temperature

compensated gate-drain zener clamp. Under overvoltage

conditions, the clamp activates and turns on the MOSFET,

safely dissipating the energy in the MOSFET.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 11.5mΩ

The built in resistor guarantees proper clamp operation

under all circuit conditions, and the MOSFET never goes

into avalanche breakdown. Advanced trench technology

provides excellent low Rdson, gate charge and body diode

characteristics, making this device ideal for motor and

inductive load control applications.

100% UIS Tested

100% R_gTested

TO220

Top View

Bottom View

10Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Clamped

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

137

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_{AS, AR}

28.5

E_AS,E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

1.9

P_DSM

Power Dissipation ^A

T_A=70°C

1.2

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Symbol

Typ

Max

Units

°C/W

≤ 10s

15.6

R_θJA

Steady-State

R_θJC

1.6

1.9

Rev1: May 2009

www.aosmd.com

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