Datasheet > AOT474L

AOT474L

更新时间： 2024-09-30 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	289K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOT474L 数据手册

AOT474/AOTF474

N-Channel Enhancement Mode

Field Effect Transistor

General Description

Product Summary

The AOT(F)474/L uses a robust technology that is

designed to provide efficient and reliable power

conversion even in the most demanding applications,

including motor control. With low R_DS(ON)and excellent

thermal capability this device is appropriate for high

current switching and can endure adverse operating

conditions.

75V

V_DS

127A

I_{D_}TO220 (at V_GS=10V)

47A

_{D_}TO220FL (at V_GS=10V)

< 11.3mΩ

R_DS(ON)(at V_GS=10V)

100% UIS Tested

AOT(F)474/AOT(F)474L are electrically Identical

AOT(F)474 -RoHS Compliant

AOT(F)474L -Halogen Free

TO220FL

TO220

Top View

Bottom View

Top View

Bottom View

AOTF474

AOT474

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOTF474

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

±25

T_C=25°C

127

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

200

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

I_DSM

I_AR

106

562

Repetitive avalanche energy L=0.1mH

E_AR

T_C=25°C

417

208

1.9

1.2

57.5

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

1.9

1.2

P_DSM

Power Dissipation ^A

T_A=70°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

AOT474

13.9

AOTF474

13.9

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Steady-State

Maximum Junction-to-Case

R_θJC

0.36

2.6

Rev 0: February 2009

www.aosmd.com

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