Datasheet > AOT500L

AOT500L

更新时间： 2024-09-30 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	454K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOT500L 数据手册

AOT500L

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

AOT500 uses an optimally designed temperature

compensated gate-drain zener clamp. Under overvoltage

conditions, the clamp activates and turns on the MOSFET,

safely dissipating the energy in the MOSFET.

The built in resistor guarantees proper clamp operation

under all circuit conditions, and the MOSFET never goes

into avalanche breakdown. Advanced trench technology

provides excellent low Rdson, gate charge and body diode

characteristics, making this device ideal for motor and

inductive load control applications.

V_DS(V) = Clamped

I_D= 80A (V_GS= 10V)

R_DS(ON)< 5.3 mΩ (V_GS= 10V)

100% UIS tested

100% Rg tested

Standard Product AOT500 is Pb-free (meets ROHS &

Sony 259 specifications)

TO220

Top View

Bottom View

10Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Maximum

clamped

Units

V_GS

T_C=25°C

Continuous Drain

Current ^G

T_C=100°C

I_D

Continuous Drain Gate Current

Continuouse Gate Source Current

Pulsed Drain Current ^C

Avalanche Current L=100uH^H

Repetitive avalanche energy ^H

T_C=25°C

I_DG

I_GS

I_DM

I_AR

E_AR

+50

250

125

115

P_D

°C

Power Dissipation ^B

T_C=100°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Symbol

Typ

Max

Units

Steady-State

R_θJA

R_θJC

0.7

1.3

°C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7

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