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AM29LV065MU101FI PDF预览

AM29LV065MU101FI

更新时间： 2024-11-07 22:18:35
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
11页 495K
描述
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

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AM29LV065MU101FI 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：TSOP1包装说明：REVERSE, MO-142DD, TSOP-48
针数：48Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.47最长访问时间：100 ns
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
JESD-609代码：e0长度：18.4 mm
内存密度：67108864 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：128端子数量：48
字数：8388608 words字数代码：8000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8MX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1-R
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
反向引出线：YES座面最大高度：1.2 mm
部门规模：64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.06 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
切换位：YES类型：NOR TYPE
宽度：12 mm

AM29LV065MU101FI 数据手册

 浏览型号AM29LV065MU101FI的Datasheet PDF文件第2页浏览型号AM29LV065MU101FI的Datasheet PDF文件第3页浏览型号AM29LV065MU101FI的Datasheet PDF文件第4页浏览型号AM29LV065MU101FI的Datasheet PDF文件第5页浏览型号AM29LV065MU101FI的Datasheet PDF文件第6页浏览型号AM29LV065MU101FI的Datasheet PDF文件第7页 
ADVANCE INFORMATION  
Am29LV065M  
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only  
Uniform Sector Flash Memory with VersatileI/O Control  
DISTINCTIVE CHARACTERISTICS  
ARCHITECTURAL ADVANTAGES  
— 8-byte read page buffer  
— 32-byte write buffer  
■ Single power supply operation  
— 3 volt read, erase, and program operations  
■ Low power consumption (typical values at 3.0 V,  
5 MHz)  
■ Enhanced VersatileI/O control  
— 30 mA typical active read current  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
— Device generates data output voltages and tolerates  
data input voltages as determined by the voltage on  
the VIO pin; operates from 1.65 to 3.6 V  
■ Package options  
— 48-pin TSOP  
■ Manufactured on 0.23 µm MirrorBit process  
technology  
— 63-ball FBGA  
■ SecSi (Secured Silicon) Sector region  
— 256-byte sector for permanent, secure identification  
through an 16-byte random Electronic Serial Number,  
accessible through a command sequence  
SOFTWARE & HARDWARE FEATURES  
■ Software features  
— Program Suspend & Resume: read other sectors  
— May be programmed and locked at the factory or by  
before programming operation is completed  
the customer  
— Erase Suspend & Resume: read/program other  
■ Flexible sector architecture  
sectors before an erase operation is completed  
— One hundred twenty-eight 64 Kbyte sectors  
— Data# polling & toggle bits provide status  
■ Compatibility with JEDEC standards  
— Unlock Bypass Program command reduces overall  
multiple-byte programming time  
— Provides pinout and software compatibility for  
single-power supply flash, and superior inadvertent  
write protection  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
■ Minimum 100,000 erase cycle guarantee per sector  
■ 20-year data retention at 125°C  
■ Hardware features  
— Sector Group Protection: hardware method of  
preventing write operations within a sector group  
PERFORMANCE CHARACTERISTICS  
■ High performance  
— Temporary Sector Unprotect: VID-level method of  
changing code in locked sectors  
— 90 ns access time  
— ACC (high voltage) pin accelerates programming  
— 25 ns page read times  
time for higher throughput during system production  
— 0.4 s typical sector erase time  
— Hardware reset pin (RESET#) resets device  
— 3.0 µs typical write buffer byte programming time:  
32-byte write buffer reduces overall programming  
time for multiple-byte updates  
— Ready/Busy# pin (RY/BY#) detects program or erase  
cycle completion  
Publication# 25262  
Issue Date: October 3, 2001  
Rev: A Amendment/+1  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Refer to AMD’s Website (www.amd.com) for the latest information.  
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与AM29LV065MU101FI相关器件

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AM29LV065MU101REF AMD

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AM29LV065MU101REI AMD

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 		64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-
AM29LV065MU101RFF SPANSION

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 		Flash, 8MX8, 100ns, PDSO48, REVERSE, MO-142DD, TSOP-48
AM29LV065MU101RFI AMD

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AM29LV065MU101RWHF AMD

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 		64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-
AM29LV065MU101RWHI AMD

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 		64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-
AM29LV065MU101WH AMD

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 		64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatil
AM29LV065MU101WHF AMD

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 		64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-
AM29LV065MU101WHI AMD

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 		64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatil
AM29LV065MU102EF SPANSION

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 		Flash, 8MX8, 100ns, PDSO48, TSOP-48

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