Datasheet > AM29LV065MU110F

AM29LV065MU110F

更新时间： 2024-11-07 22:18:35

品牌	Logo	应用领域
超微 - AMD		/
页数	文件大小	规格书
11页	495K
描述
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

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AM29LV065MU110F 数据手册

ADVANCE INFORMATION

Am29LV065M

64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only

Uniform Sector Flash Memory with VersatileI/O Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

— 8-byte read page buffer

— 32-byte write buffer

■ Single power supply operation

— 3 volt read, erase, and program operations

■ Low power consumption (typical values at 3.0 V,

5 MHz)

■ Enhanced VersatileI/O control

— 30 mA typical active read current

— 50 mA typical erase/program current

— 1 µA typical standby mode current

— Device generates data output voltages and tolerates

data input voltages as determined by the voltage on

the V_IOpin; operates from 1.65 to 3.6 V

■ Package options

— 48-pin TSOP

■ Manufactured on 0.23 µm MirrorBit process

technology

— 63-ball FBGA

■ SecSi (Secured Silicon) Sector region

— 256-byte sector for permanent, secure identification

through an 16-byte random Electronic Serial Number,

accessible through a command sequence

SOFTWARE & HARDWARE FEATURES

■ Software features

— Program Suspend & Resume: read other sectors

— May be programmed and locked at the factory or by

before programming operation is completed

the customer

— Erase Suspend & Resume: read/program other

■ Flexible sector architecture

sectors before an erase operation is completed

— One hundred twenty-eight 64 Kbyte sectors

— Data# polling & toggle bits provide status

■ Compatibility with JEDEC standards

— Unlock Bypass Program command reduces overall

multiple-byte programming time

— Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent

write protection

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

■ Minimum 100,000 erase cycle guarantee per sector

■ 20-year data retention at 125°C

■ Hardware features

— Sector Group Protection: hardware method of

preventing write operations within a sector group

PERFORMANCE CHARACTERISTICS

■ High performance

— Temporary Sector Unprotect: V_ID-level method of

changing code in locked sectors

— 90 ns access time

— ACC (high voltage) pin accelerates programming

— 25 ns page read times

time for higher throughput during system production

— 0.4 s typical sector erase time

— Hardware reset pin (RESET#) resets device

— 3.0 µs typical write buffer byte programming time:

32-byte write buffer reduces overall programming

time for multiple-byte updates

— Ready/Busy# pin (RY/BY#) detects program or erase

cycle completion

Publication# 25262

Issue Date: October 3, 2001

Rev: A Amendment/+1

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Refer to AMD’s Website (www.amd.com) for the latest information.

12 3 4 5 6 7...11

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与AM29LV065MU110F相关器件

型号	品牌	获取价格	描述	数据表
AM29LV065MU110FF	AMD	获取价格	64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-
AM29LV065MU110FI	AMD	获取价格	64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatil
AM29LV065MU110WH	AMD	获取价格	64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatil
AM29LV065MU110WHF	AMD	获取价格	64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-
AM29LV065MU110WHI	AMD	获取价格	64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatil
AM29LV065MU112EF	AMD	获取价格	64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-
AM29LV065MU112EI	AMD	获取价格	64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-
AM29LV065MU112FF	SPANSION	获取价格	Flash, 8MX8, 110ns, PDSO48, REVERSE, MO-142DD, TSOP-48
AM29LV065MU112FI	AMD	获取价格	64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-
AM29LV065MU112REF	AMD	获取价格	64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-

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