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AM29LV065MU120EF PDF预览

AM29LV065MU120EF

更新时间: 2024-09-20 05:15:39
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
62页 1230K
描述
64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control

AM29LV065MU120EF 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TSSOP, TSSOP48,.8,20Reach Compliance Code:unknown
风险等级:5.79最长访问时间:120 ns
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:8部门数/规模:128
端子数量:48字数:8388608 words
字数代码:8000000最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
电源:1.8/3.3,3/3.3 V认证状态:Not Qualified
就绪/忙碌:YES部门规模:64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.06 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPEBase Number Matches:1

AM29LV065MU120EF 数据手册

 浏览型号AM29LV065MU120EF的Datasheet PDF文件第2页浏览型号AM29LV065MU120EF的Datasheet PDF文件第3页浏览型号AM29LV065MU120EF的Datasheet PDF文件第4页浏览型号AM29LV065MU120EF的Datasheet PDF文件第5页浏览型号AM29LV065MU120EF的Datasheet PDF文件第6页浏览型号AM29LV065MU120EF的Datasheet PDF文件第7页 
Am29LV065MU  
Data Sheet  
RETIRED  
PRODUCT  
This product has been retired and is not available for designs. For new and current designs,  
S29GL064A supersedes Am29LV065MU and is the factory-recommended migration path. Please  
refer to the S29GL064A datasheet for specifications and ordering information. Availability of this  
document is retained for reference and historical purposes only.  
The following document contains information on Spansion memory products.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal data sheet improvement and are noted in the  
document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number 25262 Revision C Amendment 4 Issue Date September 12, 2006  

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