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AM29LV065MU102WHI PDF预览

AM29LV065MU102WHI

更新时间: 2024-11-11 04:00:15
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
8页 104K
描述
Flash, 8MX8, 100ns, PBGA63, 11 X 12 MM, 0.80 MM PITCH, FBGA-63

AM29LV065MU102WHI 数据手册

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ADVANCE INFORMATION  
Am29LV065M  
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only  
Uniform Sector Flash Memory with VersatileI/O Control  
DISTINCTIVE CHARACTERISTICS  
ARCHITECTURAL ADVANTAGES  
— 8-byte read page buffer  
— 32-byte write buffer  
Single power supply operation  
Low power consumption (typical values at 3.0 V,  
— 2.7–3.6 volt read, erase, and program operations  
5 MHz)  
Enhanced VersatileI/O control  
— 30 mA typical active read current  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
— Device generates data output voltages and tolerates  
data input voltages as determined by the voltage on  
the VIO pin; operates from 1.65 to 3.6 V  
Package options  
— 48-pin TSOP  
Manufactured on 0.23 µm MirrorBit process  
technology  
— 63-ball FBGA  
SecSi (Secured Silicon) Sector region  
— 256-byte sector for permanent, secure identification  
through an 16-byte random Electronic Serial Number,  
accessible through a command sequence  
SOFTWARE & HARDWARE FEATURES  
Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— May be programmed and locked at the factory or by  
the customer  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
Flexible sector architecture  
— One hundred twenty-eight 64 Kbyte sectors  
— Data# polling & toggle bits provide status  
Compatibility with JEDEC standards  
— Unlock Bypass Program command reduces overall  
multiple-byte programming time  
— Provides pinout and software compatibility for  
single-power supply flash, and superior inadvertent  
write protection  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
Minimum 100,000 erase cycle guarantee per sector  
20-year data retention at 125°C  
Hardware features  
— Sector Group Protection: hardware method of  
preventing write operations within a sector group  
PERFORMANCE CHARACTERISTICS  
High performance  
Temporary Sector Unprotect: VID-level method of  
changing code in locked sectors  
— 90 ns access time  
— ACC (high voltage) pin accelerates programming  
time for higher throughput during system production  
— 25 ns page read times  
— 1 s typical sector erase time  
— Hardware reset pin (RESET#) resets device  
— 3.0 µs typical write buffer byte programming time:  
32-byte write buffer reduces overall programming  
time for multiple-byte updates  
— Ready/Busy# pin (RY/BY#) detects program or erase  
cycle completion  
Publication# 25262  
Issue Date: August 3, 2001  
Rev: A Amendment/0  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Refer to AMD’s Website (www.amd.com) for the latest information.  

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