Datasheet > AM29LV040B-60RFC

AM29LV040B-60RFC

更新时间： 2024-11-28 23:29:39

品牌	Logo	应用领域
其他 - ETC		闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
35页	716K
描述
x8 Flash EEPROM

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AM29LV040B-60RFC 数据手册

Am29LV040B

4 Megabit (512 K x 8-Bit)

CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Unlock Bypass Program Command

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Reduces overall programming time when issuing

multiple program command sequences

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

■ Embedded Algorithms

— Embedded Erase algorithms automatically

preprogram and erase the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

■ High performance

— Embedded Program algorithms automatically

writes and verifies data at specified addresses

— Full voltage range: access times as fast as 70 ns

— Regulated voltage range: access times as fast as

60 ns

■ Minimum 1,000,000 write/erase cycles

guaranteed

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

■ Ultra low power consumption (typical values at

5 MHz)

— Automatic sleep mode: 1 µA

— Standby mode: 1 µA

— 32-pin PLCC

— Read mode: 7 mA

— 32-pin TSOP

— Program/erase mode: 15 mA

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

■ Flexible sector architecture

— Eight 64 Kbyte sectors

— Superior inadvertent write protection

— Any combination of sectors can be erased;

supports full chip erase

■ Data# Polling and toggle bits

— Sector Protection features:

— Provides a software method of detecting program

or erase cycle completion

Hardware method of locking a sector to prevent

any program or erase operations within that sector

■ Erase Suspend/Resume

Sectors can be locked via programming

equipment

— Supports reading data from or programming data

to a sector not being erased

This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may

be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21354 Rev: D Amendment/+1

Issue Date: November 13, 2000

12 3 4 5 6 7...35

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与AM29LV040B-60RFC相关器件

型号	品牌	获取价格	描述	数据表
AM29LV040B-60RFCB	SPANSION	获取价格	Flash, 512KX8, 60ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-60RFDB	SPANSION	获取价格	Flash, 512KX8, 60ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-60RFFB	SPANSION	获取价格	Flash, 512KX8, 60ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-60RFI	ETC	获取价格	x8 Flash EEPROM
AM29LV040B-60RFIB	SPANSION	获取价格	Flash, 512KX8, 60ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-60RJC	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-60RJCB	SPANSION	获取价格	Flash, 512KX8, 60ns, PQCC32, PLASTIC, LCC-32
AM29LV040B-60RJD	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-60RJDB	SPANSION	获取价格	Flash, 512KX8, 60ns, PQCC32, PLASTIC, LCC-32
AM29LV040B-60RJE	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory

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