Datasheet > AM29LV040B-70EDB

AM29LV040B-70EDB

更新时间： 2024-11-24 04:01:55

品牌	Logo	应用领域
飞索 - SPANSION		光电二极管
页数	文件大小	规格书
34页	720K
描述
Flash, 512KX8, 70ns, PDSO32, MO-142BD, TSOP-32

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AM29LV040B-70EDB 数据手册

Am29LV040B

4 Megabit (512 K x 8-Bit)

CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Unlock Bypass Program Command

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Reduces overall programming time when issuing

multiple program command sequences

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

■ Embedded Algorithms

— Embedded Erase algorithms automatically

preprogram and erase the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

■ High performance

— Embedded Program algorithms automatically

writes and verifies data at specified addresses

— Full voltage range: access times as fast as 70 ns

— Regulated voltage range: access times as fast as

60 ns

■ Minimum 1,000,000 write/erase cycles

guaranteed

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

■ Ultra low power consumption (typical values at

5 MHz)

— Automatic sleep mode: 1 µA

— Standby mode: 1 µA

— 32-pin PLCC

— Read mode: 7 mA

— 32-pin TSOP

— Program/erase mode: 15 mA

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

■ Flexible sector architecture

— Eight 64 Kbyte sectors

— Superior inadvertent write protection

— Any combination of sectors can be erased;

supports full chip erase

■ Data# Polling and toggle bits

— Sector Protection features:

— Provides a software method of detecting program

or erase cycle completion

Hardware method of locking a sector to prevent

any program or erase operations within that sector

■ Erase Suspend/Resume

Sectors can be locked via programming

equipment

— Supports reading data from or programming data

to a sector not being erased

Publication# 21354 Rev: D Amendment/0

Issue Date: November 11, 1999

12 3 4 5 6 7...34

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与AM29LV040B-70EDB相关器件

型号	品牌	获取价格	描述	数据表
AM29LV040B-70EE	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-70EEB	SPANSION	获取价格	Flash, 512KX8, 70ns, PDSO32, MO-142BD, TSOP-32
AM29LV040B-70EF	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-70EFB	SPANSION	获取价格	Flash, 512KX8, 70ns, PDSO32, MO-142BD, TSOP-32
AM29LV040B-70EI	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-70EIB	SPANSION	获取价格	Flash, 512KX8, 70ns, PDSO32, MO-142BD, TSOP-32
AM29LV040B-70EK	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-70EKB	SPANSION	获取价格	Flash, 512KX8, 70ns, PDSO32, MO-142BD, TSOP-32
AM29LV040B-70FC	ETC	获取价格	x8 Flash EEPROM
AM29LV040B-70FCB	SPANSION	获取价格	Flash, 512KX8, 70ns, PDSO32, REVERSE, MO-142BD, TSOP-32

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