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AM29LV040B-70FC PDF预览

AM29LV040B-70FC

更新时间: 2024-11-25 23:29:39
品牌 Logo 应用领域
其他 - ETC 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
35页 716K
描述
x8 Flash EEPROM

AM29LV040B-70FC 数据手册

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Am29LV040B  
4 Megabit (512 K x 8-Bit)  
CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Unlock Bypass Program Command  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
— Reduces overall programming time when issuing  
multiple program command sequences  
— Regulated voltage range: 3.0 to 3.6 volt read and  
write operations and for compatibility with high  
performance 3.3 volt microprocessors  
Embedded Algorithms  
— Embedded Erase algorithms automatically  
preprogram and erase the entire chip or any  
combination of designated sectors  
Manufactured on 0.32 µm process technology  
High performance  
— Embedded Program algorithms automatically  
writes and verifies data at specified addresses  
— Full voltage range: access times as fast as 70 ns  
— Regulated voltage range: access times as fast as  
60 ns  
Minimum 1,000,000 write/erase cycles  
guaranteed  
20-year data retention at 125°C  
— Reliable operation for the life of the system  
Package option  
Ultra low power consumption (typical values at  
5 MHz)  
— Automatic sleep mode: 1 µA  
— Standby mode: 1 µA  
— 32-pin PLCC  
— Read mode: 7 mA  
— 32-pin TSOP  
— Program/erase mode: 15 mA  
Compatibility with JEDEC standards  
— Pinout and software compatible with single-  
power supply Flash  
Flexible sector architecture  
— Eight 64 Kbyte sectors  
— Superior inadvertent write protection  
— Any combination of sectors can be erased;  
supports full chip erase  
Data# Polling and toggle bits  
— Sector Protection features:  
— Provides a software method of detecting program  
or erase cycle completion  
Hardware method of locking a sector to prevent  
any program or erase operations within that sector  
Erase Suspend/Resume  
Sectors can be locked via programming  
equipment  
— Supports reading data from or programming data  
to a sector not being erased  
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may  
be revised by subsequent versions or modifications due to changes in technical specifications.  
Publication# 21354 Rev: D Amendment/+1  
Issue Date: November 13, 2000  

与AM29LV040B-70FC相关器件

型号 品牌 获取价格 描述 数据表
AM29LV040B-70FCB SPANSION

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Flash, 512KX8, 70ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-70FDB SPANSION

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Flash, 512KX8, 70ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-70FE ETC

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x8 Flash EEPROM
AM29LV040B-70FEB SPANSION

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Flash, 512KX8, 70ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-70FFB SPANSION

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Flash, 512KX8, 70ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-70FI ETC

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x8 Flash EEPROM
AM29LV040B-70FIB SPANSION

获取价格

Flash, 512KX8, 70ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-70FKB SPANSION

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Flash, 512KX8, 70ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-70JC AMD

获取价格

4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-70JCB SPANSION

获取价格

Flash, 512KX8, 70ns, PQCC32, PLASTIC, LCC-32